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| 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3757 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.9 (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 30 2 5 30 103 2 3 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA - SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.17 62.5 Unit C/W C/W 1 Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 42.8 mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with caution. 3 1 2006-11-06 2SK3757 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate -source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr 10 V VGS 0V 50 ID = 1 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min 30 450 2.0 0.28 Typ. 1.9 1.0 330 4 45 15 Max 10 100 4.0 2.45 pF Unit A V A V V S VOUT ns Turn-on time Switching time Fall time ton RL = 200 25 tf Duty < 1%, tw = 10 s = VDD 200 V - VDD 360 V, VGS = 10 V, ID = 2 A - 20 nC Turn-off time Total gate charge Gate-source charge Gate-drain charge toff Qg Qgs Qgd 80 9 5 4 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1000 5.0 Max 2 5 -1.5 Unit A A V ns C Marking K3757 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3757 ID - VDS 2 COMMON SOURCE T = 25 PULSE TEST ID - VDS 5 6.0 10 8.0 7.25 7.0 6.75 COMMON SOURCE T = 25 PULSE TEST 8.0 DRAIN CURRENT ID (A) 5.75 10 DRAIN CURRENT ID (A) 1.6 4 1.2 5.5 3 6.5 0.8 5.25 5.0 2 6.0 5.5 0.4 V = 4.5V 1 V = 5.0V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS (V) 10 0 0 10 20 30 40 DRAIN-SOURCE VOLTAGE VDS (V) 50 ID - VGS 5 DRAIN-SOURCE VOLTAGE VDS (V) COMMON SOURCE V = 20V PULSE TEST VDS - VGS 10 COMMON SOURCE T = 25 PULSE TEST DRAIN CURRENT ID (A) 4 8 3 6 I = 2.0A 2 100 25 4 1.0 1 T = -55 2 0.5 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS (V) 10 0 0 4 8 12 16 GATE-SOURCE VOLTAGE VGS (V) 20 Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S) RDS (ON) - ID 30 10.0 DRAIN-SOURCE ON RESISTANCE RDS (ON) () COMMON SOURCE V = 20V PULSE TEST COMMON SOURCE Tc = 25C PULSE TEST 10 T = -55 25 100 5 3 1.0 VGS = 10, 15 V 1 0.1 0.1 1 DRAIN CURRENT ID (A) 10 0.5 0.1 0.3 0.5 1 3 5 10 DRAIN CURRENT ID (A) 3 2006-11-06 2SK3757 RDS (ON) - Tc 10 IDR - VDS 10 DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON RESISTANCE RDS (ON) () COMMON SOURCE VGS = 10 V PULSE TEST 8 3 COMMON SOURCE Tc = 25C PULSE TEST 1 6 ID = 2 A 4 1.0 0.3 10 3 0.03 1 0.01 VGS = 0, -1 V 0.5 0.1 2 0 -80 -40 0 40 80 120 160 0 -0.2 -0.4 -0.6 -0.8 -1.0 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) 1000 CAPACITANCE - VDS 5 Ciss Vth - Tc Vth (V) COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 4 (pF) 100 Coss GATE THRESHOLD VOLTAGE CAPACITANCE C 3 2 10 COMMON SOURCE V = 0V f = 1MHz Tc = 25 1 0.1 1 10 100 Crss 1 0 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc 50 500 DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN-SOURCE VOLTAGE VDS (V) COMMON SOURCE ID = 2 A Tc = 25C PULSE TEST VDS 300 90 200 VDS = 360 V VGS 8 180 12 20 PD (W) DRAIN POWER DISSIPATION 30 20 10 100 4 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0 14 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-06 GATE-SOURCE VOLTAGE VGS 40 400 16 (V) 2SK3757 rth - tw 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 4.17C/W 0.003 10 100 1m 10 m 100 m 1 10 PDM PULSE WIDTH tw (S) SAFE OPERATING AREA 10 200 ID max (PULSE) * 100 s * 3 ID max (CONTINUOUS) 1 ms * EAS - Tch AVALANCHE ENERGY EAS (mJ) 160 DRAIN CURRENT ID (A) 120 1 80 0.3 DC OPERATION Tc = 25C 40 0.1 0 25 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) 0.03 * SINGLE NONPETITIVE PULSE Tc = 25C Curves must be derated linearly with VDSS max increase in temperature 0.01 1 10 100 1000 Tch (C) 15 V -15 V BVDSS IAR VDD VDS DRAIN-SOURCE VOLTAGE VDS (V) TEST CIRCUIT RG = 25 VDD = 90 V, L = 42.8 mH WAVE FORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-06 2SK3757 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06 |
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